SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem in a ferroelectric field effect transistor featuring nonvolatile holding of data that the data holding characteristics cannot be improved radically because a depolarized field impeding data holding is created by a remanent polarization in the ferroelectric itself in a conventional structure. SOLUTION: A structure in which a depolarized field is not created is obtained by touching the opposite sides of a thin ferroelectric film to a semiconductor thereby realizing charge compensation on the heterointerface of the ferroelectric and the semiconductor. On the other hand, a structure for reading out nonvolatile data without disturbing charge compensation is realized by driving compensation charges themselves and reading out the data. COPYRIGHT: (C)2004,JPO