PRECURSOR FOR FORMING HAFNIUM OXIDE FILM, METHOD FOR FORMING HAFNIUM OXIDE FILM, CAPACITOR STRUCTURE, TRANSISTOR STRUCTURE, AND ELECTRONIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a precursor for forming a hafnium oxide film and a method for forming the hafnium oxide film, using the precursor.

SOLUTION: By a precursor for forming a hafnium oxide film, characterized by bonding hafnium tetrachloride with a nitrogen compound, low-temperature evaporation is permitted while the electrical properties are improved. There are obtained the precursor for forming the hafnium oxide film exhibiting improved step coverage, due to improvement in the deposition rate, and a method for forming the hafnium oxide film, using this precursor.

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