| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving device in which the electrostatic breakdown and the surface inversion of an isolation region are eliminated while enhancing light receiving sensitivity. SOLUTION: The semiconductor light receiving device comprises a light receiving part having a light receiving surface formed on the major surface of a p-type silicon substrate 1, and an antireflection film 30 formed to cover the light receiving surface in order to prevent the reflection of incident light, wherein the antireflection film 30 is composed of a first oxide film 8 formed to cover the light receiving surface, a second oxide film 13 formed to cover the first oxide film 8, and a nitride film 14 formed to cover the second oxide film 13. The first oxide film 8 is an oxide film formed by thermal oxidation, and the second oxide film 13 is an oxide film formed by CVD. COPYRIGHT: (C)2004,JPO
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