| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent destruction of data and erroneous reading in a semiconductor memory device. <P>SOLUTION: This device is provided with a differential amplifier type sense amplifier 11 connected to bit lines BL and a column selection switch 12 switching and controlling connection and disconnection of bit lines BL and data lines DL. The differential amplifier type sense amplifier 11 has MOS transistor columns Qp1 and Qp2 connecting the power source of the sense amplifier and the bit lines BL. ON-resistance of a MOS transistor Qn4 constituting the column selection switch 12 is larger than the sum of ON-resistance of the MOS transistor columns Qp1 and Qp2. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004103116(A) |
申请公布日期 |
2004.04.02 |
| 申请号 |
JP20020263856 |
申请日期 |
2002.09.10 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAKUMA TETSUJI;HIRANO HIROSHIGE |
| 分类号 |
H01L21/8242;G11C7/06;G11C11/407;G11C11/409;G11C11/419;H01L21/8239;H01L27/105;H01L27/108 |
主分类号 |
H01L21/8242 |
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