| 摘要 |
PROBLEM TO BE SOLVED: To prevent metal element from segregating and aggregating partially. SOLUTION: The method for manufacturing a crystal silicic film is as follows: an amorphous silicic film is formed, the metal element which promotes crystallization of silicon is kept on the surface of the non-crystal silicic film, the amorphous silicic film is heated to form the crystal silicic film, a laser beam of a pulse oscillator system is processed into a linear beam, and the linear beam irradiates the crystal silicic film. The distribution of energy of the linear beam is a normal distribution or a distribution similar to the normal distribution, in a cross section parallel to the scanning direction of the laser beam. When the linear beam scans the crystal silicic film along in the scanning direction of the laser beam, the linear beam irradiates the crystal silicic film, its part falling on the film, thereby, the linear beam can irradiate one point of the crystal silicic film 3 to 100 times. COPYRIGHT: (C)2004,JPO
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