发明名称 |
Method of reducing variable retention characteristics in DRAM cells |
摘要 |
The illustrated embodiments relate to reducing variable retention time in dynamic random access memory (DRAM) integrated circuit devices. Memory cells that comprise the DRAM device are placed in a reverse bias condition. While under reverse bias, the DRAM device is maintained at an elevated temperature for a predetermined time.
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申请公布号 |
US2004042306(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20020230594 |
申请日期 |
2002.08.29 |
申请人 |
MEYER RUSSELL L.;BEFFA RAY |
发明人 |
MEYER RUSSELL L.;BEFFA RAY |
分类号 |
G11C7/04;G11C11/406;(IPC1-7):G11C7/04 |
主分类号 |
G11C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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