| 摘要 |
In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In1-X-YGaXAlYN (0<=X, Y<=1, 0<=X+Y<=1) AND IN1-X'-Y'GaX'AlY'N (0<=X', Y'<=1, 0<=X'+Y'<=1). An electric field is being generated in the light absorption layer by spontaneous polarization.
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