发明名称 SPIN DRIVEN RESISTORS AND NANOGATES
摘要 A spin driven resistor comprising a magnetic body whose resistance increases due to resonance when subjected to an externally applied magnetic field while in the presence of an externally applied electromagnetic field is presented. The spin driven resistor has applications in a variety of spintronic devices including read heads and detectors that are very fast and operate and low power. The spin driven resistor may also be used to modulate spin value, spin tunnel junction, spin-LED, and spin-transistor devices by exposing device to an electromagnetic field and a magnetic field.
申请公布号 WO2004028002(A2) 申请公布日期 2004.04.01
申请号 WO2003US29664 申请日期 2003.09.19
申请人 THE OHIO STATE UNIVERSITY 发明人 EPSTEIN, ARTHUR, J.
分类号 G01R33/06;G01R33/09;H01F10/193;H01F10/32 主分类号 G01R33/06
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