发明名称 |
Structure of thin film transistor |
摘要 |
A method of manufacturing a thin film transistor for solving the drawbacks of the prior art is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.
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申请公布号 |
US2004061174(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030632641 |
申请日期 |
2003.08.01 |
申请人 |
CHANG KOW MING;CHUNG YUAN HUNG |
发明人 |
CHANG KOW MING;CHUNG YUAN HUNG |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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