Test structure for determining a doping region of an electrode connection between a trench capacitor and a selection transistor in a memory cell array

摘要

A test structure for a memory cell array determines a doping region of an electrode connection that, in a memory cell, connects an inner capacitor electrode of a trench capacitor to an associated selection transistor. The test structure has an electrical contact with a predetermined contact area disposed between a regular matrix configuration of four trench capacitors.