| 发明名称 |
FORMATION OF A RELAXED USEFUL LAYER FROM A WAFER WITH NO BUFFER LAYER |
| 摘要 |
Process for forming a useful layer (6) from a wafer (10), the wafer (10) comprising a supporting substrate (1) and a strained layer (2) that are chosen respectively from or,ystalline materials. The process includes <i first step of forming a region of perturbation (3) in the supporting substrate (1) at defined depth by creating structural perturbations that cause at least relative relaxation of the elastic strains in the strained layer (2). The process includes a second step of supplying energy in order to cause at least relative relaxation of the elastic strains in the strained layer (2). The process includes a third step of removing a portion of the wafer (10) on the opposite side from the relaxed strained layer (2'), the useful layer (6) being the remaining portion of the wafer (10). The present invention also relates to an application of the process and to wafers produced during the process. |
| 申请公布号 |
WO2004027858(A1) |
申请公布日期 |
2004.04.01 |
| 申请号 |
WO2003IB04793 |
申请日期 |
2003.09.17 |
| 申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;GHYSELEN, BRUNO;AKATSU, TAKESHI |
发明人 |
GHYSELEN, BRUNO;AKATSU, TAKESHI |
| 分类号 |
H01L21/20;H01L21/762 |
主分类号 |
H01L21/20 |
| 代理机构 |
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