METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to avoid a gate bridge in a subsequent process and a self-aligned contact(SAC) fail in a process for forming a landing plug contact(LPC) by forming and oxidizing a polycrystalline silicon layer as a buried layer in the moat generated in an insulation layer on the boundary of an isolation region and an active region and by performing a process for forming a gate oxide layer. CONSTITUTION: A trench-type isolating oxide layer(35) is formed in an isolation region of a semiconductor substrate(31) while the moat is generated on the boundary of the isolation region and the active region. A silicon layer is formed on the front surface including the isolating oxide layer and is etched back to fill the silicon layer in the moat. The silicon layer is oxidized.