发明名称 Nonvolatile semiconductor memory
摘要 <p>The memory has a data circuit coupled to a bit line (BLek, BLok) and including temporarily stored program or read data of a memory cell. The circuit has three data storage units with a data transfer circuit coupled between initial and third units and another transfer circuit between second and third units. The second unit forcibly changes data of the initial unit based on data stored in the second unit.</p>
申请公布号 EP1403877(A1) 申请公布日期 2004.03.31
申请号 EP20030004334 申请日期 2003.02.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TANAKA, TOMOHARU
分类号 G11C16/02;G11C11/56;G11C16/04;(IPC1-7):G11C11/56 主分类号 G11C16/02
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