发明名称 Semiconductor device
摘要 A semiconductor device in which a photoreceptor element and a semiconductor element are formed on a common semiconductor substrate, includes: a substrate of a first conductive type; and a semiconductor layer of a second conductive type formed on the substrate; wherein the photoreceptor element is composed of the substrate and the semiconductor layer; and an impurity concentration region of the first conductive type having an impurity concentration higher than that of the substrate is provided at a position under the semiconductor layer in a region where the semiconductor element is to be formed. <IMAGE>
申请公布号 EP1049168(A3) 申请公布日期 2004.03.31
申请号 EP20000108794 申请日期 2000.04.25
申请人 SONY CORPORATION 发明人 FUJISAWA, TOMOTAKA;ARAI, CHIHIRO
分类号 H01L29/73;H01L21/316;H01L21/331;H01L21/76;H01L21/8222;H01L21/8224;H01L21/8228;H01L27/06;H01L27/082;H01L27/144;H01L29/732;H01L31/10 主分类号 H01L29/73
代理机构 代理人
主权项
地址