| 摘要 |
PURPOSE: A method for reducing coupling noise of a semiconductor device is provided to intercept generation of coupling noise and contribute to operating stabilization of a semiconductor device by forming a ground voltage between silicon oxide layers for insulating conductive interconnections. CONSTITUTION: The first insulation layer(23) is formed on a predetermined underlying layer(21) during a process for fabricating a semiconductor device. The first and second conductive lines are formed on the first insulation layer. The second insulation layer(29) is deposited on the resultant structure. After a photoresist layer is formed on the second insulation layer, a photoresist layer pattern is formed to etch the insulation layer between the first and second conductive lines by a mask process. The second insulation layer under the photoresist layer pattern is etched by using the photoresist layer pattern as an etch barrier to form an opening between the first and second conductive lines. The photoresist layer pattern is eliminated. A conductive material is deposited on the resultant structure. The deposited conductive material is etched by an etch-back process to form the third conductive line in the opening. The third conductive line is formed between the first and second conductive lines. A ground voltage is applied to the third conductive line to remove the coupling noise.
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