N-type silicon substrate variable capacitance for voltage controlled oscillator, has electrode formed of ribs protruding from substrate, substrate portions underlying ribs and substrate portions separating bases of two ribs

摘要

The capacitance has an electrode (20) formed of all ribs protruding from a substrate, of portions of the substrate underlying the ribs and of portions of the substrate separating the bases of two ribs. Another electrode is superposed to one portion of the previous electrode, where the ribs are irregular in terms of planar base surface area. The ribs are arranged in quincunx.