| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of a photo-resist residue which is not removed after development, and at the same time, to prevent the increase of a dielectric constant caused by the moisture absorption of a porous insulating film when metal wiring is formed in the insulating film by dual damascene. SOLUTION: The method for forming a pattern of the intermetal insulating film includes (a) a stage of successively forming a lower etching preventing film 2, a lower insulating film 3, an upper etching preventing film 4, and an upper insulating film 5 on a semiconductor substrate to which lower wiring 1 is formed, (b) a stage of forming a via hole to expose the lower etching preventing film by patterning the upper insulating film, the upper etching preventing film, and the lower insulating film, (c) a stage in which the vial hole is irradiated with UV light, (d) a patterning stage by forming a photo-resist film on the whole face of the semiconductor substrate in which the via hole is formed, (e) a stage of forming a wiring groove passing through the via hole on the upper insulating film by patterning the upper insulating film by making the photo-resist pattern 6 as an etching mask, and (f) a stage of exposing the upper part of the lower wiring. COPYRIGHT: (C)2004,JPO |
