| 发明名称 |
Method for producing p-type Group III nitride compound semiconductor |
| 摘要 |
A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.
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| 申请公布号 |
US2004058465(A1) |
申请公布日期 |
2004.03.25 |
| 申请号 |
US20030665475 |
申请日期 |
2003.09.22 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
TAKI TETSUYA |
| 分类号 |
H01L21/20;H01L21/205;H01L21/225;H01L21/263;H01L21/324;H01L33/06;H01L33/32;H01S5/323;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 地址 |
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