发明名称 Chemical-pressure tailoring of low-field, room temperature magnetoresistance in (ca, sr, ba) fe.0.5mo0.5o3
摘要 The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFe0.5MO0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (Sr0.2Ba0.8Fe0.5Mo0.5O3) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.
申请公布号 US2004057897(A1) 申请公布日期 2004.03.25
申请号 US20030240832 申请日期 2003.03.07
申请人 CHEONG SANG-WOOK;KIM BOG-GI 发明人 CHEONG SANG-WOOK;KIM BOG-GI
分类号 C01G49/00;G01K7/38;G01R33/09;G11B5/39;H01F1/40;H01L43/10;(IPC1-7):C01G49/02 主分类号 C01G49/00
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