| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multi-chip press-contact package of SiC chips that can operate at a high temperature. <P>SOLUTION: This multi-chip press-contact package is constituted by integrating a plurality of small wide-gap single-crystal semiconductor (SiC) chips 1 by collectively and equally pressurizing the chips 1. The chips 1 are integrated by equally pressurizing the chips 1 by inserting spacers 2 and 3 made of a material having a low coefficient of thermal expansion into both surfaces of each chip 1 in the pressurizing direction and respectively the arranging emitter and collector electrode blocks 4 and 5 on both sides of the spacers 2 and 3. <P>COPYRIGHT: (C)2004,JPO</p> |
