| 摘要 |
PROBLEM TO BE SOLVED: To provide a driving method for a voltage-driven semiconductor element that makes internal loss to be reduced, when the element is turned on. SOLUTION: A voltage variable circuit VC<SB>1</SB>is interposed in a gate drive circuit of an IGBTQ<SB>1</SB>as the voltage-driven semiconductor element. When the collector current Ic of the IGBTQ<SB>1</SB>detected with a current detector CT in the voltage variable circuit VC<SB>1</SB>is 0≤Ic<Ic<SP>*</SP>(current reference value), the forward-bias voltage is v<SB>FB1</SB>, if Ic≥Ic<SP>*</SP>, and when the forward-bias voltage is v<SB>FB2</SB>. Further when v<SB>FB1</SB><v<SB>FB2</SB>, and when the collector current Ic is 0≤Ic<Ic<SP>*</SP>the drive loss is reduced, resulting in reduced internal loss (conduction loss + drive loss), when the IGBTQ<SB>1</SB>is turned on. COPYRIGHT: (C)2004,JPO
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