发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING CHIP MALFUNCTION RECOVERY FUNCTION
摘要 PURPOSE: A semiconductor memory device having a chip malfunction recovery function is provided to recover a chip set as a malfunction state into a state before being set. CONSTITUTION: According to the semiconductor memory device, the first integrated circuit part stores data. The second integrated circuit part includes a plurality of function groups to read data stored in the first integrated circuit part. The first set of programming circuit(10) sets the first state when the device is determined to be defective. The second set of programming circuit(20) sets the second state to bypass the first state. And an output circuit(30) is connected to the first and the second set programming circuit element and provides an output signal to at least one function group according to the first and the second state. The first level of the output signal is generated to prohibit the operation of the semiconductor device, and the second level of the output signal is generated to recover the semiconductor device to an enable state.
申请公布号 KR20040025729(A) 申请公布日期 2004.03.25
申请号 KR20020056331 申请日期 2002.09.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SANG SEOK;KIM, GWANG YEONG;SHIN, JU WON
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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