| 摘要 |
PROBLEM TO BE SOLVED: To provide a dual spin valve magnetic detector having a large (▵R×A). SOLUTION: The film thicknesses t1 and t2 of a first free magnetic layer 53 and a second free magnetic layer 55 of a free magnetic layer 26 having a synthetic ferrimagnetic structure are set larger than a spin diffusion length, whereby the magnetic detector can be reduced in electric resistance while conduction electrons move through the magnetic detector as their spin kept unchanged. By this setup, the difference between the minimum resistance value and maximum resistance value of the magnetic detector or a magnetoresistance change in the magnetic detector can be made large. COPYRIGHT: (C)2004,JPO
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