发明名称 |
METHODS OF CONTROLLING OXYGEN PARTIAL PRESSURE DURING ANNEALING OF A PEROVSKITE DIELECTRIC LAYER, AND STRUCTURES FABRICATED THEREBY |
摘要 |
Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments. |
申请公布号 |
WO03096402(A3) |
申请公布日期 |
2004.03.25 |
申请号 |
WO2003US09595 |
申请日期 |
2003.03.28 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
MARIA, JON-PAUL;KINGON, ANGUS, IAN |
分类号 |
B05D3/02;B05D5/12;B32B9/00;B32B15/04;C04B35/491;C04B35/64;H01G4/12;H01L21/316 |
主分类号 |
B05D3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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