发明名称 |
Method for forming low dielectric constant damascene structure while employing a carbon doped silicon oxide capping layer |
摘要 |
Within a damascene method for forming a patterned conductor layer having formed interposed between its patterns a patterned dielectric layer formed of a comparatively low dielectric constant dielectric material method, there is employed a patterned capping layer formed upon the patterned dielectric layer. The patterned capping layer is formed employing a plasma enhanced chemical vapor deposition (PECVD) method in turn employing an organosilane carbon and silicon source material, a substrate temperature of from about 0 to about 200 degrees centigrade and a radio frequency power of from about 100 to about 1000 watts per square centimeter substrate area. The patterned capping layer provides for attenuated abrasive damage to the dielectric layer incident to the damascene method and is typically partially planarized incident to the damascene method.
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申请公布号 |
US2004058523(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20020246895 |
申请日期 |
2002.09.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LI LAIN-JONG;KO CHUNG-CHI |
分类号 |
H01L21/316;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/316 |
代理机构 |
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地址 |
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