| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing apparatus and a processing method for a substrate which can process the substrate having a microstructure on the surface with high reliability. SOLUTION: A semiconductor substrate 21 is irradiated with a laser beam, using a laser beam irradiation unit 34 disposed outside of a vessel 17, under the condition that a process gas containing SF<SB>6</SB>and O<SB>2</SB>is supplied into the vessel 17. On the part of the semiconductor substrate 21 irradiated with the laser beam, silicon is excited and is reacted with the process gas and turned into a gaseous substance. The semiconductor substrate 21 on a stage 18 is maintained at a given temperature by passing a chiller through a refrigerant flow path 24. COPYRIGHT: (C)2004,JPO |
