| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory circuit having fast operation speed and high radiation resistance. SOLUTION: This semiconductor memory circuit 10 is provided with a depression NMOS 12 that serially connects a memory node 14 and a gate connection line 16, and a depression NMOS 12 that serially connects a memory node 15 complementary to the memory node 14 and a gate connection line 17. When data are not written in the semiconductor memory circuit 10, the respective depression NMOSs 12 are turned off to be controlled so as to have a resistance of 100 KΩto 100 MΩ. On the other hand, when the data are written in the semiconductor memory circuit 10, the depression NMOSs 12 are turned on to be controlled so as to have a resistance of 1 kΩto 50 kΩ. COPYRIGHT: (C)2004,JPO
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