发明名称 REMOVER COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a remover composition and a washing method of semiconductor substrates or semiconductor elements using the remover composition which can prevent re-sticking of a deposit with being obtainable an excellent removing property of the deposit produced after ashing, can obtain a stable property and state and a stable removing property with little corrosive to a wiring material, no precipitation formed by crystallization even in low-temperature preservation, nor deterioration or the like in the removing property resulting from it. SOLUTION: The remover composition contains 0.5 to 5 wt% of polycarboxylate, 1 to 18 wt% of glycol ether, and 77 to 98.5 wt% of water. The remover composition is composed of 0.5 to 5 wt% of polycarboxylate, 1 to 18 wt% of glycol ether, and 77 to 98.5 wt% of water. The washing method of semiconductor substrates or semiconductor elements has a process for removing and washing the semiconductor substrate or the semiconductor element using the remover composition. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004094034(A) 申请公布日期 2004.03.25
申请号 JP20020256772 申请日期 2002.09.02
申请人 KAO CORP 发明人 TAMURA ATSUSHI
分类号 G03F7/42;H01L21/027;H01L21/308;(IPC1-7):G03F7/42 主分类号 G03F7/42
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