发明名称 LIGHT-EMITTING APPARATUS AND FABRICATION METHOD OF THE SAME
摘要 <p>Conventionally, there are problems that high resolution is difficult to be achieved since an extreme narrow width bank can not be formed and an aperture ratio as a light-emitting device is low. In addition, there is a threat of electrostatic discharge damage or adhesion of dust during the transportation of a substrate provided with an anode into the equipment for depositing EL material. In view of the foregoing, a first bank formed of an inorganic insulating film is formed, and an insulating film is formed thereon, then, a second bank in contact with a side face of the first bank by carrying out etch back, and then, a side wall bank is formed. For preventing electrostatic discharge damage, an antistatic layer is formed, and the substrate is transported, then, the antistatic layer is removed to form the second bank.</p>
申请公布号 WO2004026002(A1) 申请公布日期 2004.03.25
申请号 WO2003JP11608 申请日期 2003.09.11
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KUWABARA, HIDEAKI 发明人 KUWABARA, HIDEAKI
分类号 H01L27/32;H05B33/22;(IPC1-7):H05B33/14 主分类号 H01L27/32
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