| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure realizing a power management semiconductor device or an analog semiconductor device being fabricated at a low cost in a short term and capable of a low voltage operation while exhibiting low power consumption, high driving power and high accuracy. SOLUTION: The semiconductor device comprises a buried insulating film provided on a supporting substrate, a semiconductor thin film provided on the buried insulating film, and an MOS transistor formed on the semiconductor thin film wherein the buried insulating film is formed thicker beneath the source and drain of the MOS transistor as compared with other regions. COPYRIGHT: (C)2004,JPO
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