| 摘要 |
PURPOSE: To comprise a semiconductor laser device in which the reduction of an optical output in the case of a large current is reduced, slope efficiency is high, and an image in the near field of view is not considerably fluctuated in comparison with a conventional semiconductor laser. CONSTITUTION: The semiconductor laser device is provided with a p-InP clad layer 14 which is arranged on a p-InP wafer 12, an active area 16 which is arranged on the p-InP clad layer 14, an n-InP clad layer 18a which is arranged on the active area 16, an n-InP clad layer 18b which is arranged on the n-InP clad layer 18a, and an n-InGaAsP clad layer 20 which is laminated between the n-InP clad layer 18a and the n-InP clad layer 18b on the side of the active area 16 rather than a position where the intensity of light of the image in the near field of view of laser light emitted from the active area 16 substantially becomes "0", has thickness from 0.05 to 0.3μm and moves the weight center of light intensity distribution to the (n) side.
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