Semiconductor light emitting device

摘要

A second cladding layer (8) composed of p-AlGaN and a second contact layer (9a) composed of p-GaN are formed in this order on a light emitting layer (7) composed of a nitride based semiconductor. A predetermined region of the second cladding layer (8) and the second contact layer (9a) is removed, to form a ridge portion. A high-resistive current blocking layer (12), to which impurities have been added, is formed on an upper surface of a flat portion of the second cladding layer, which remains without being removed, and on both sidewalls of the ridge portion.