发明名称 METHOD OF FORMING THICK RESIST PATTERN
摘要 <p>A radiation sensitive resin composition for forming a thick film resist pattern comprises an alkali-soluble resin and a photosensitizer containing a quinone diazide group, wherein the alkali-soluble resin is a mixture of a novolak resin and one or more resins selected from the group consisting of (i) a polyacrylate, (ii) a polymethacrylate, (iii) a polystyrene derivative, and (iv) a copolymer comprising two or more monomer units selected from the group of an acrylate, a methacrylate and a styrene derivative. The composition is applied on a substrate to form a 2.0 mu m or more of resist film in thickness. The resist film is exposed to light and developed to form a thick film resist pattern. The radiation sensitive resin composition may contain a low-molecular or high-molecular compound having phenolic hydroxyl group or groups as a dissolution promoter or a sensitivity improving agent, a fluorescent material as a sensitizer, etc. &lt;IMAGE&gt;</p>
申请公布号 EP1400850(A1) 申请公布日期 2004.03.24
申请号 EP20020733301 申请日期 2002.06.05
申请人 CLARIANT INTERNATIONAL LTD. 发明人 TAKAHASHI, SHUICHI
分类号 G03F7/004;G03F7/032;G03F7/022;G03F7/023;H01L21/027;(IPC1-7):G03F7/022;G03F7/033 主分类号 G03F7/004
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