GATE INSULATING LAYER STRUCTURE OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A gate insulating layer structure and a method for forming the same are provided to prevent attacks of boron into a substrate by using a stacked gate insulating layer including a lower silicon oxynitride layer, a silicon oxide layer and an upper silicon oxynitride layer. CONSTITUTION: A silicon oxide layer(110) is formed on a semiconductor substrate(100). A lower silicon oxynitride layer(112) is formed between the semiconductor substrate and the silicon oxide layer. An upper silicon oxynitride layer(114) is then formed on the silicon oxide layer, thereby forming a stacked silicon insulating layer.