发明名称 |
Fabrication method for a flash memory device with a split floating gate and a structure thereof |
摘要 |
A fabrication method for a flash memory device with a split floating gate is described. The method provides a substrate, wherein an oxide layer and a patterned sacrificial layer are sequentially formed on the substrate. Ion implantation is then conducted to form source/drain regions with lightly doped source/drain regions in the substrate beside the sides of the patterned sacrificial layer using the patterned sacrificial layer as a mask. Isotropic etching is further conducted to remove a part of the patterned sacrificial layer, followed by forming two conductive spacers on the sidewalls of the patterned sacrificial layer. The patterned sacrificial layer and oxide layer that is exposed by the two conductive spacers are then removed to form two floating gates. Subsequently, a dielectric layer and a control gate are formed on the substrate.
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申请公布号 |
US6709921(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20010967717 |
申请日期 |
2001.09.27 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
YEH YEN-HUNG;FAN TSO-HUNG;TSAI WEN-JER;LIU MU-YI;CHAN KWANG YANG;LU TAO-CHENG |
分类号 |
H01L21/28;H01L21/336;H01L29/788;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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