发明名称 Dynamic CMOS circuits with individually adjustable noise immunity
摘要 A technique to individually adjust noise immunity of each input of a dynamic circuit including parallel or series-parallel pull-down network includes identifying precharge nodes of the dynamic circuit that require a reduction of noise. The technique further includes identifying NMOS transistor drains connected to respective precharge nodes, and creating a pull-up network of PMOS transistors for the identified precharge nodes. After creating a pull-up network of PMOS transistors, the technique includes arranging the order of the PMOS transistors corresponding to the respective precharge nodes to improve noise immunity and performance of the dynamic circuit. After arranging the order of the PMOS transistors, the technique can further include sizing the PMOS transistors to achieve the required reduction of noise for the precharge nodes.
申请公布号 US6710627(B2) 申请公布日期 2004.03.23
申请号 US20020322934 申请日期 2002.12.18
申请人 INTEL CORPORATION 发明人 STAN MIRCEA R.;DE VIVEK K.
分类号 H03K19/096;(IPC1-7):H03K19/096 主分类号 H03K19/096
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