Method and apparatus of wafer exposure with correction feedback

摘要

A method of wafer exposure with correction feedback. The method includes the steps of using a first group of parameters to expose the first wafer to transfer a pattern of a first layer, using a second group of parameters to perform overlay alignment of the pattern of the first layer with a pattern of a second layer for the first wafer, measuring the first wafer to obtain a first and second correction respectively for the first and second parameter groups correcting the first group with the first correction and using the corrected parameters to expose the second wafer to transfer the pattern of the first layer, and correcting the second group with the second correction and using the corrected parameters to perform overlay alignment of the pattern of the first layer with the pattern of the second layer for the second wafer.