发明名称 |
СПОСОБ ГЕТТЕРИРУЮЩЕЙ ОБРАБОТКИ ПОЛУПРОВОДНИКОВЫХ ПЛАСТИН |
摘要 |
FIELD: semiconductor engineering. SUBSTANCE: method intended for removing background impurities and extended structural flaws during manufacture of semiconductor wafers and structures for integrated circuits and digital semiconductor devices includes manufacture of wafers and their ultrasonic treatment in neutral liquid for 2.5 3.0 h at the same time applying dc voltage V whose value is found from formula given in description of invention. EFFECT: enhanced uniformity of distribution of wafer electrophysical characteristics due to reduced concentration of structural flaws. 1 cl, 3 tbl |
申请公布号 |
RU2002120834(A) |
申请公布日期 |
2004.03.20 |
申请号 |
RU20020120834 |
申请日期 |
2002.07.30 |
申请人 |
ФГПУ научно-исследовательский институт измерительных систем им. Ю.Е. Седакова |
发明人 |
Смолин Валентин Константинович;Скупов Владимир Дмитриевич |
分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|