| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode without increasing the forward voltage or reverse current and lowering of the reverse breakdown voltage, which has few reverse recovery charges and exhibits a soft recovery characteristics. SOLUTION: In the diode, a lightly doped P-type semiconductor region 3 is partially formed on the surface of an N-type semiconductor layer 1, and a heavily doped P<SP>+</SP>-type semiconductor region 4 is formed shallower than this region 3 in depth so as to embed a gap between these regions 3. By decreasing injection carriers by the P-type semiconductor region 3, ohmic contact is ensured by the P<SP>+</SP>-type semiconductor region 4. Since the P-type semiconductors region 3 is set deep and the P<SP>+</SP>-semiconductor region 4 is set shallow, breakdown voltage is easy to secure. COPYRIGHT: (C)2004,JPO |
