| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which, in the case of an emitter top HBT, prevents increase of the leakage current between the emitter and the base, and which, in the case of a collector top HBT, reduces Cbc, and also to provide a method of manufacturing the same. SOLUTION: The semiconductor device is a bipolar transistor which comprises a semiconductor substrate; a collector layer, base layer, and an emitter layer; and a collector electrode, a base electrode, and an emitter electrode which are electrically connected to the collector layer, the base layer, and the emitter layer, respectively. The transisitor has an air space to the side of the emitter layer or the collector layer above the base layer. In the case of the emitter top HBT, a decrease in hFE due to the formation of an insulation film on a front surface near a joint between the emitter layer and the base layer, or due to the exposure of the front surface near the joint between the emitter layer and the base layer to the atmosphere can be prevented. In the case of the collector top HBT, Cbc can be reduced. COPYRIGHT: (C)2004,JPO
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