| 摘要 |
PROBLEM TO BE SOLVED: To provide an edge-emitting semiconductor laser of a broad area whose transverse mode can be made a stable single mode, an electronic equipment having the edge-emitting semiconductor laser, and a control method of the edge-emitting semiconductor laser and a manufacturing method of the edge-emitting semiconductor laser. SOLUTION: Since a photonic bandgap is prepared in the width direction of a waveguide of an edge-emitting semiconductor laser 1, a transverse mode of projected laser beam can be made a single mode readily. Concretely, since the refractive index lattice is formed in a wavelength region in a second clad layer 3b and a photonic bandgap is prepared in the width direction of a waveguide, the transverse mode of projected laser beam can be made a single mode without forming a new region for the refractive index lattice. COPYRIGHT: (C)2004,JPO
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