SILICON SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal and a method for producing the same in which even a large-diameter silicon single crystal can be separated without dislocation without harmful effect on crystal characteristics in a short time. SOLUTION: The silicon single crystal produced by Czochralski method has a tail end surface in which an annular recessed part is formed along the periphery thereof; a disk raised section is concentrically formed inside the annular recessed part; and a protruding liquid droplet section is formed during separation facing downward at the center of the disk raised section. The silicon single crystal also has an inclined portion at the periphery of the tail end surface in which an annular recessed part is formed in the inner side thereof; a disk raised section is concentrically formed inside the annular recessed part; and a protruding liquid droplet section is formed during separation facing downward at the center of the disk raised section. COPYRIGHT: (C)2004,JPO