LOW TEMPERATURE DEPOSITION OF SILICON BASED THIN FILMS BY SINGLE-WAFER HOT-WALL RAPID THERMAL CHEMICAL VAPOR DEPOSITION

摘要

The present invention provides a single-wafer hot-wall RTCVD system and method capable of achieving high deposition rates, preferably of up to and over 1000 ANGSTROM /min, to deposit silicon nitride films or layers (Si3N4) using reactants including but not limited to Si2H6 with NH3 at a low temperatures of up to approximately 550 DEG C.