| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device of high reliability by enabling property fluctuations of a reference cell to be reduced by a simple circuit structure. <P>SOLUTION: The semiconductor storage device has a plurality of reference cells for giving a reference voltage and, since a selected reference cell switches every reading cycle, an electric field stress to the reference cell at the time of reading can be reduced. By counting a signal of an address displacement detector circuit and switching the reference cells in order of the counted number, an overhead as an additional circuit can be made small and the semiconductor storage device of high reliability can be provided. <P>COPYRIGHT: (C)2004,JPO</p> |
