| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a semiconductor integrated circuit device has a tendency to enlarge a leak current because of a thin gate oxide film, a low threshold voltage and the like and power consumption is increased by the leak current in recent years. SOLUTION: In the semiconductor integrated circuit device having a first circuit block 1 equipped with a high-speed transistor and a second circuit block 2 which has a logical function equal with the first circuit block and is equipped with a low-speed transistor, currents are supplied to the first and second circuit blocks via independent power source lines (81, 91; 82, 92) and the first and second circuit blocks are driven by independent clocks CLKH and CLKL. COPYRIGHT: (C)2004,JPO
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