发明名称 |
Apparatus and method for surface finishing a silicon film |
摘要 |
A method of treating a silicon surface of a substrate that includes heating the substrate in a process chamber to a temperature, exposing a first area adjacent to the silicon surface to a first gas mixture comprising an etchant, a silicon source gas, and a carrier, exposing a second area adjacent to the silicon surface to a second gas mixture, wherein the second gas mixture is different from the first gas mixture.
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申请公布号 |
US2004053515(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20020243790 |
申请日期 |
2002.09.12 |
申请人 |
COMITA PAUL B.;LENA THILDERKVIST KARIN ANNA;SCUDDER LANCE |
发明人 |
COMITA PAUL B.;LENA THILDERKVIST KARIN ANNA;SCUDDER LANCE |
分类号 |
C30B29/06;C30B33/00;H01L21/00;H01L21/20;H01L21/205;H01L21/306;H01L21/762;(IPC1-7):H01L21/26 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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