发明名称 |
Method of fabricating a gate structure of a field effect transistor using a hard mask |
摘要 |
A method of fabricating a gate structure of a field effect transistor, comprising forming a hard mask, etching a gate electrode, and contemporaneously forming a gate dielectric and removing the hard mask.
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申请公布号 |
US2004053484(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20020245130 |
申请日期 |
2002.09.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KUMAR AJAY;NALLAN PADMAPANI C. |
分类号 |
H01L21/28;H01L21/311;H01L21/3213;H01L21/336;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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