| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a polycrystalline thin film which allows the effective formation of polycrystalline thin films such as high-quality polycrystalline transparent conductive films, polycrystalline silicon thin films, and polycrystalline ferroelectric films. SOLUTION: Gas containing reactive gas is introduced into a discharge space between electrodes under the atmospheric pressure or under the pressure near the atmospheric pressure, and then the gas is turned into a plasma state. Then, a base material is exposed to the gas in a plasma state to form a thin film on the base material. Thereafter, for example, in an atmosphere wherein at least one kind of gas among hydrogen gas, nitrogen gas, and inert gas is circulated under the atmospheric pressure or under the pressure near the atmospheric pressure, a laser beam is irradiated on the thin film to apply laser annealing to the thin film to form a polycrystalline thin film. COPYRIGHT: (C)2004,JPO
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