| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer edge etching device having gas dispersion structure which can supply an etching gas to the wafer edge uniformly. SOLUTION: The wafer edge etching device is located in a processing chamber 100 and is equipped with a gas dispersion plate for guiding an etching gas flow so that the etching gas is supplied only to the edge portion of the wafer. The gas dispersion plate 106 is equipped with an upper plate 108 where the flow inlet of the etching gas is formed in the center, a lower plate 110 which is fastened with the upper plate and holds a predetermined space between the upper plate to form the flow outlet of the etching gas, at least one spacer 112 which is located between the flow inlet and flow outlet and holds the space between the upper plate and lower plate, and a guide means which is formed near the flow outlet and guides the flow so that the gas is discharged substantially and uniformly regardless of the location of at least one spacer when the etching gas flowed into the flow inlet flows into the flow outlet of the edge. COPYRIGHT: (C)2004,JPO
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