| 摘要 |
<p>A semiconductor device wherein the diffusion depth of impurities in a diffusion layer is made uniform and a desired threshold voltage is obtained by a single diffusion, thereby improving the yield, and a method for manufacturing such a semiconductor device are provided. The semiconductor device has a channel layer (16) formed on a substrate (12), a diffusion stopping layer (17) formed on the upper surface of the channel layer (16), a diffusion layer (18) formed on the upper surface of the diffusion stopping layer, and a doped region (25) which is formed at least in a portion of the diffusion layer (18) so as to be in contact with the diffusion stopping layer (17) and into which impurities are diffused. The diffusion stopping layer (17) has an impurity diffusion rate lower than that of the diffusion layer (18), and thus stops the diffusion of impurities from the diffusion layer (18).</p> |
